Electrically active centers introduced in p-type Si by rapid thermal processing
نویسندگان
چکیده
منابع مشابه
suppression of coke formation in thermal cracking by coke inhibitors
the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...
15 صفحه اولThermal Model of Rapid Thermal Processing Systems
Continuously shrinking device parameters and the enlargement of wafer diameters in semiconductor industry require best temperature homogeneity in Rapid Thermal Processing (RTP). This together with the requirement of high ramp rates in the range of 200 °C s as advantageously used in ultra shallow junction processes [1] challenges temperature control in RTP technology. In order to design advanced...
متن کاملElectrically active defects in as-implanted, deep buried layers in p-type silicon
We have studied electrically active defects in buried layers, produced by heavy ion implantation in silicon, using both conventional deep level transient spectroscopy ~DLTS! and an isothermal spectroscopic technique called time analyzed transient spectroscopy operated in constant capacitance mode ~CC-TATS!. We show that CC-TATS is a more reliable method than DLTS for characterization of the hea...
متن کاملSymrnetrlc Si/Si 1 -,Ge, two-dimensional hole gases grown by rapid thermal chemical vapor deposition
Single and symmetric double p-type modulation-doped structures have been fabricated in Si/ SiGe for the first time by rapid-thermal chemical-vapor deposition. Temperaturedependent electrical-measurements and high-field magnetotransport measurements demonstrate the presence of a well-confined two-dimensional hole gas in these samples. Nominallysymmetric normal and inverted structures differ in c...
متن کاملThermal Stability of P-Type BiSbTe Alloys Prepared by Melt Spinning and Rapid Sintering
P-type BiSbTe alloys have been widely implemented in waste heat recovery from low-grade heat sources below 600 K, which may involve assorted environments and conditions, such as long-term service, high-temperature exposure (generally 473-573 K) and mechanical forces. It is important to evaluate the service performance of these materials in order to prevent possible failures in advance and exten...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: physica status solidi (c)
سال: 2010
ISSN: 1862-6351
DOI: 10.1002/pssc.201000263